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| BFP740 NPN Silicon Germanium RF Transistor* * High gain ultra low noise RF transistor * Provides outstanding performance for a wide range of wireless applications up to 10 GHz * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz * High maximum stable gain Gms = 27.5 dB at 1.8 GHz * Gold metallization for extra high reliability * 150 GHz fT-Silicon Germanium technology *Short-term description 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP740 Maximum Ratings Parameter Marking R7s 1=B Pin Configuration 2=E 3=C 4=E Symbol VCEO 4 3.5 VCES VCBO VEBO IC IB Ptot Tj TA T stg 13 13 1.2 30 3 160 150 Package SOT343 Value Unit V - Collector-emitter voltage TA > 0C TA 0C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 89C Junction temperature Ambient temperature Storage temperature mA mW C -65 ... 150 -65 ... 150 1T is measured on the collector lead at the soldering point to the pcb S 1 Nov-19-2004 BFP740 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 380 Unit K/W Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 25 mA, VCE = 3 V 1For calculation of R thJA please refer to Application Note Thermal Resistance Unit max. 30 100 3 400 V A nA A - typ. 4.7 250 V(BR)CEO ICES ICBO IEBO hFE 4 160 2 Nov-19-2004 BFP740 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 25 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 25 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 25 mA, VCE = 3 V, ZS = ZL = 50 , f = 6 GHz Third order intercept point at output2) VCE = 3 V, I C = 25 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 25 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit - 42 0.08 0.25 0.45 - GHz pF Ccb Cce Ceb F dB 0.5 0.85 27.5 dB G ms - G ma - 17 - dB |S21e|2 IP 3 24.5 13.5 23 - dB dBm P-1dB - 10 - 3 Nov-19-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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